发明名称 SEMICONDUCTOR LIGHT DETECTOR
摘要 PURPOSE:To reduce brooming, by placing the constituent elements of a plurality of photodiode arrays, which are provided in a semiconductor substrate, in insular regions separated from one another by separation regions and by using p-n junctions to separate the constituent elements from one another. CONSTITUTION:A plurality of photodiode elements having p-n junctions JA, JB,... for detection of light, which are made of n type layers 12A, 12B,... and p type layers 15A, 15B,..., are provided in insular regions separated from one another by separation layers 13 in a silicon substrate 11. The array constituting elements are separated from one another by p-n junctions KA, KB,... among the n type layers 12A, 12B,..., the p<+> type separation layers 13 and the p type silicon substrate 1. After phosphorus glass 17 is produced on the entire surface of photodiode arrays, openings for electrodes 18 are made and Al is coated as the electrodes by evaporation. Prescribed wirings are provided among the electrodes 18. Brooming is thereby reduced.
申请公布号 JPS5633515(A) 申请公布日期 1981.04.04
申请号 JP19790108111 申请日期 1979.08.27
申请人 HITACHI LTD 发明人 OOUCHI HIROBUMI;KAWAKAMI SUMIO;MUKAI TOUJI
分类号 G01J1/02;H01L27/146 主分类号 G01J1/02
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