| 摘要 |
PURPOSE:To prevent the cutting of a wiring metal at the contact hole section having a sharp difference in level by burying a conductive material for the purpose of reducing the difference in level in a contact hole and also by connecting a wiring metal through the intermediate of the said conductive material. CONSTITUTION:A semiconductor 12, having a conductive type reverse to that of a substrate, is formed at a part of a semiconductor 11, then one main surface of the substrate 11 and a part of the semiconductor are covered and an insulating film layer 13 is formed with a contact hole opened. After the contact hole, having a sharp difference in level, has been filled up with the first conductive material 15, the second conductive material 17 is adhered and a wiring metal layer is formed. |
