| 摘要 |
PURPOSE:To make a unit separation layer of large depth, by providing an impurity- added amorphous semiconductor layer in contact with a single crystal semiconductor and irradiating laser light to suppress horizontal diffusion. CONSTITUTION:An n epitaxial layer 3 is overlapped with a p-type Si substrate 1 having n<+> buried layers 2. Openings are selectively made in an SiO2 film 4 to provided V-grooves extending to the substrate 1. An amorphous Si layr 6 is coated by evaporation. B ions are injected. Laser light is irradiated to change the amorphous Si into single crystal, diffuse the B and produce p-type single crystal layers 7 or unit separation layers. Films 8, 4 are removed. Another SiO2 film 9 is made. p-Type and n-type diffused layers are manufactured in the n-type epitaxial layer 3 as prescribed, thereby completing a semiconductor device. Since the amorphous semiconductor absorbs much laser light, only the amorphous semiconductor is molten by selective irradiation of laser light so that the impurity is much diffused vertically but hardly diffused horizontally. Therefore, the area of each separation layer can be made very small. This results in heightening the degree of integration. |
