| 摘要 |
PURPOSE:To obtain a semiconductor device having an equal and stable electric characteristic notwithstanding the direction of the places where electrodes are fixed to a heat radiating substrate by a method wherein an electrode having a small area is formed by an evaporation and an electrode having a large area is formed by an electroless plating. CONSTITUTION:A p-type diffusion layer 2 is formed on an n-type Si substrate 1 to form a PN-junction 10, a groove 3 is formed at the surface near the junction 10, masking is performed on the surface having the groove 3 and an electroless plating is performed to form an Ni layer 7 on the surface opposite to the groove side 3. Then the masking medium is removed and the groove 3 is treated chemically to form a glass film 4. Al is evaporated on the side of the substrate 1 having the groove 3, the Al on the film 4 is removed, an electroless Ni plating is performed to form Ni layer respectively on the Al layer 8 to form an anode and on the Ni layer 7 to form a cathode, and the substrate is cut at the groove part to obtain a diode pellet. By this way, a semiconductor device having a stable electric characteristic can be obtained. |
