| 摘要 |
PURPOSE:To remarkably improve the accuracy of forming a fine photoresist pattern by employing two types of different resists having different properties to form a resist pattern having both excellent adherence and resolution. CONSTITUTION:The first photoresist film 11 having desired adherence is coated on a semiconductor substrate 10, exposed with light, developed, and the first photoresist film 11 is coated on the substrate 10. Then, the second photoresist film 12 having slower ashing speed than the film 11 with desired resolution is coated on the film 11, and patterned as desired. Thereafter, with the second photoresist pattern as a mask the exposed film 11 is ashed and removed. |
