发明名称 |
SOLAR BATTERY AND METHOD OF FABRICATING THE SAME |
摘要 |
PURPOSE:To save the machining and power costs and the like of a solar battery and reduce the cost of the battery by employing polycrystal element material. CONSTITUTION:A polycrystalline silicon is formed by a low temperature plasma generating process. The polycrystalline silicon is adhered to the specimen 10 in plasma to form an n-type polycrystalline silicon film 20. Boron ion is implanted to the surface of the film 20 to form a region 21. The region 21 where ion is implanted by laser light 22 is uniformly heated. Thus, a pn junction is formed between the film 20 and the layer 21. A surface electrode 23 is then formed, and a surface reflection preventive film and a protective film are then formed thereon. |
申请公布号 |
JPS55133580(A) |
申请公布日期 |
1980.10.17 |
申请号 |
JP19790040611 |
申请日期 |
1979.04.03 |
申请人 |
MATSUSHITA ELECTRONICS CORP |
发明人 |
TOOI ATSUTOMO |
分类号 |
H01L31/04;H01L21/205;H01L21/265;H01L31/0368 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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