| 摘要 |
PURPOSE:To prevent the deformation and the denaturalization in the oxidation and etching processes with a higher S/N in the scanning of the electron beam by composing the upper portion of the mark of an acid resistance material with the T- shaped corss-section. CONSTITUTION:A position detecting mark 11 with the T-shaped cross-section provided on the Si substrate 12 is made up of the upper section 13 made of Si nitride and the strut section 14 made of Si oxide. With such an arrangement, when electron beam is scanned on the mark 11, the reflection of the electron beam or S/N of the secondary electron can be enhanced to the same level as those of the inverted slant concave mark formed by back etching, because of T-shaped cross-section thereof. As a result, the positioning accuracy can be improved remarkably. As the upper portion 13 of the mark is made of an acid resistance material, the deformation and denaturalization of the mark otherwide repeated in the production process of IC can be prevented in the oxidation and etching processes. Thus, the detection accuracy can be stabilized. |
