| 摘要 |
PURPOSE:To make it possible to perform write as well as rewrite in a high speed and complete a non-volatile read/wtite memory by providing a heating element around an amorphous memory element. CONSTITUTION:P-type diffusion layer 2 is formed in a part of N conductive-type substrate 1. Substrate protecting insulating film 3 is provided on substrate 1, and semiconductor 5 which should become a memory element is formed on film 3 through heating element 8 and Mo electrode 4 for one contact to amorphous semiconductor 5. Further, Mo electrode 6 is formed on conductor 5 as the other contact to semiconductor 5. Then, Al wiring 7 for the connection between a diode and semiconductor 5 as well as a leading-out wiring of cells to the external and electrodes 9 and 10 for heating element 8 are formed. At a memory write time, heating element 8 is caused to be conductive together with semiconductor 5, and the temperature of semiconductor 5 and parts around it rises simultaneously. |
