| 摘要 |
PURPOSE:To obtain the good oscillation properties featuring small hysteresis with a simple constitution and easy adjustment through stabilization obtained by connecting the circuit having the loss at the oscillation frequency band between two terminals among three terminals of the transistor. CONSTITUTION:Two sheets of alumina plate 231 and 232 with strip line 221 and 222 formed on the surface are provided on carrier plate 21, and conductor bar 25 with chip-type GaAsFET24 mounted is installed at the gap between the alumina plates. The source of chip 24 is connected via wire bonding to chip carrier 25, along with the drain and the gate connected via wire bonding to line 222 and 221 respectively. The other end of line 221 connected to the gate is connected to the bias circuit as well a to 50OMEGA load 26, and the bias circuit and 50OMEGA load 28 are also connected with the other end of line 222 connected to the drain used as output terminal 27. Line 222 of the output terminal side functions to couple dielectric resonator 29. |
