| 摘要 |
PURPOSE:To shorten the process, and improve the controllability of gate length by a method wherein, after an insulating film is formed, a gate is patterned with photoresist, metal is vapor-deposited, the resist is eliminated, and then the insulating film is subjected to anisotropic etching. CONSTITUTION:A gate is patterned on an insulating film 3 with photoresist PR1, and metal 2 is vapor-deposited on the PR1 and the film 3; an aperture pattern is formed with metal having a specified gate length; a gate aperture is formed by anisotropic etching of the film 3. Althrough the PR patterning is restricted by the resolution of an aligner, a gate pattern whose gate length is finer than the resolution dimension is obtained by lengthening the developing period, because the PR dimension left as a gate pattern depends on the developing period. Thereby, two times growth of insulating film is made one time growth for process reduction, and the controllability of the gate length is improved. |
