| 摘要 |
<p>PURPOSE:To obtain a side face inclined at a fixed angle, by fixing the reverse face of a semiconductor wafer, which is provided with plural independent electrodes at regular intervals on the surface, to a support material and coating all the surface of the main face side with transparent wax and etching the processed face after dicing parts between electrodes through transparant wax. CONSTITUTION:PN junction is formed by p-type region 11 and N-type region 12, and plural independent electrodes 13 are formed at regular intervals on region 11, and electrode 14 is caused to adhere onto the reverse face of region 12. For the purpose of dividing semiconductor wafer 10, which is constituted in this manner, into individual pellets, the electrode 14 side is first to substrate 16 such as glass through wax 17. Next, the surface of region 11 including electrode 13 is coated with transparent wax 15, and dicing saw 18 which has the tip inclined at a prescribed angle is applied onto the part between electrodes 13, and dicing is performed to provide V-shaped groove 19 until groove 19 reaches electrode 14. After that, the surface of groove 19 is cleaned by etching, and next, the wafer is divided into individual pellets.</p> |
