发明名称 ULTRA HIGH FREQUENCY TRANSISTOR AMPLIFIER
摘要 PURPOSE:To obtain a matching circuit for a wide band with keeping the width of strip lines in a proper range and without damaging mechanical strength by reducing the specific inductive capacity of an insulator according as going away from a transistor. CONSTITUTION:Insulator substrates 35 to 37 of EI1 to EI3 where the specific inductive capacity is reduced in order according to as going away from Tr 39 and insulator substrates 32 to 34 of EO1 to EO3 where the specific inductive capacity is reduced in order according as going away from Tr 39 and insulator substrates 32 to 34 of EO1 to EO3 where the specific inductive capacity is reduced in order according as going away from TR 39 are arranged in the input side and the output side of transistor 39 respectively. Strip line 38 is formed on insulator substrates 32 to 37. By this constituion, the characteristic impedance of the strip line is a function of strip line width/substrate thickness specific inductive capacity, and is increased in the input side as well as the output side according as going away from transistor 39 without changing line width/substrate thickness considerably.
申请公布号 JPS54101648(A) 申请公布日期 1979.08.10
申请号 JP19780008542 申请日期 1978.01.27
申请人 NIPPON ELECTRIC CO 发明人 ABE HIROYUKI
分类号 H03F3/189;H01P5/02;H03F3/60;H03H7/38 主分类号 H03F3/189
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