| 摘要 |
<p>PURPOSE:To obtain a semiconductor device having high quality and stable yield without increasing manufacturing steps by forming a structure in which an interlayer insulating film, a passivation film remain on whole scribing line. CONSTITUTION:This is the case of a semiconductor device having a gate interconnection 1 layer, a metal interconnection 2 layer of a MOS semiconductor element. When a contact hole 17 for bringing source, drain 5 into contact with first layer metal interconnection 9 is formed by miniaturization technique after an interlayer insulating film 8 is formed by a CVD method or the like, the film 8 on a scribing line 2 is formed with a resist pattern and so protected as not to be etched at the time of etching, and the film 8 remains on the whole scribing line 2. Similarly, an interlayer insulating film 10 also remains on the whole line 2. The films 8, 10 remains on the whole line 2 to eliminate stepwise difference. Further, a passivation film 12 also remains on the whole line 2 to completely prevent a problem of peeling of an alignment mark 20 for an aligner.</p> |
