| 摘要 |
<p>PURPOSE:To prevent a macrodomain which depends upon the step height from an adjacent area and a rubbing direction from being formed by decreasing parts of both flanks of a gate bus line and a data bus line and end surface of respective thin film transistor parts which abut on a rubbing-directional back surface stepwise in thickness. CONSTITUTION:Parts of both flanks of various bus lines GB and DB and end surfaces of respective transistor parts which abut on the rubbing-directional back surface 31 are decreased stepwise in thickness, its lower stage 42 and upper stage 41 are formed stepwise or the lower stage 42 is tapered, and the step height of the lower stage 42 from the adjacent area is reduced so that no macrodomain is formed. Therefore, the maximum thickness of the various bus lines GB and DB and respective transistor parts can be set nearly to conventional thickness. Consequently, the enough thickness for the resistance reduction of the bus line DB is secured and the macrodomain is prevented from being formed.</p> |
