Integrated circuit mesa bipolar device on insulating substrate incorporating Schottky barrier contact

摘要

A PNP bipolar transistor is protected by a Schottky barrier, in which an N- base of the device forms a Schottky diode with a metallizing which is used as the collector. No separate P- semiconductor region is provided as the collector. Such transistors may be combined with NPN transistors having integrated but distinct Schottky and collector electrodes.