发明名称 Microwave magnetron system with negative resistance diode enhancement - has capacitive coupling to inhibit parasitic operation
摘要 <p>A microwave cavity gp. or magnetron is used which has enhanced power output. The high output is obtained by inclusion, within the central volume, of semiconductor diodes which have negative resistance characteristics at U.H.F. The diode circuit operates the minimal parasitic effects and losses and consists of an array of such diodes and passive components arranged symmetrically about the magnetron axis. The diodes (4) working at around 10GHz functioning in pairs in phase opposition are connected to the inward edges of the cavity walls (3) and to a central conductor (5) which provides bias. The walls are interconnected by straps to ensure the correct operating mode. Parasitic operation is inhibited by resistive and capacitive (7) coupling symmetrically arranged about the axis.</p>
申请公布号 FR2377120(A1) 申请公布日期 1978.08.04
申请号 FR19770000615 申请日期 1977.01.11
申请人 THOMSON CSF 发明人 ALAIN BERT ET GERARD KANTOROWICZ;KANTOROWICZ GERARD
分类号 H03B9/14;(IPC1-7):03H13/00;03B9/12 主分类号 H03B9/14
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