| 发明名称 |
PROCESS FOR FABRICATING COMPLEMENTARY INSULATED GATE FIELD EFFECT TRANSISTOR STRUCTURE AND THE STRUCTURE FABRICATED BY THE PROCESS |
| 摘要 |
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| 申请公布号 |
GB1499548(A) |
申请公布日期 |
1978.02.01 |
| 申请号 |
GB19750021285 |
申请日期 |
1975.05.19 |
| 申请人 |
FAIRCHILD CAMERA & INSTR CORP |
发明人 |
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| 分类号 |
H01L21/00;H01L21/316;H01L21/331;H01L21/762;H01L21/8238;H01L27/092;H01L29/00;H01L29/73;H01L29/78;(IPC1-7):H01L21/38;H01L21/82 |
主分类号 |
H01L21/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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