FIELD EFFECT TRANSISTOR STRUCTURE AND METHOD OF MAKING SAME

摘要

An improved field effect transistor structure which reduces a leakage phenomenon, termed the "sidewalk" effect, between the semiconductor substrate and a conductive silicon dioxide layer disposed over the substrate. The improvement comprises forming a layer of highly resistive, silicon dioxide or silicon oxynitride, which is between the conductive oxide and the silicon nitride layer which forms a portion of the gate insulator for the field effect transistor.