发明名称 |
Process for fabricating small geometry semiconductive devices including integrated components |
摘要 |
Disclosed is a process for fabricating small geometry electronic devices, including a variety of integrated optical devices. The process includes the steps of holographically exposing a resist masking layer to a plurality of optical interference patterns in order to develop a masking pattern on the surface of a semiconductive body. Thereafter, regions of the body exposed by openings in the masking pattern are ion beam machined to thereby establish very small dimension undulations in these regions. These closely spaced undulations have a variety of uses in optical devices as will be described. The present invention is not limited to the geometry control of semiconductive structures, and may also be used in the geometry control of metallization patterns which have a variety of applications, or the geometry control of any ion beam sensitive material.
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申请公布号 |
US4049944(A) |
申请公布日期 |
1977.09.20 |
申请号 |
US19750606373 |
申请日期 |
1975.08.20 |
申请人 |
HUGHES AIRCRAFT COMPANY |
发明人 |
GARVIN, HUGH L.;YARIV, AMNON;SOMEKH, SASSON |
分类号 |
G03F7/20;H01L21/027;H01L21/265;(IPC1-7):B23K9/00 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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