| 发明名称 |
HALBLEITERANORDNUNG MIT PASSIVIERTER OBERFLAECHE UND VERFAHREN ZUR HERSTELLUNG DIESER ANORDNUNG |
| 摘要 |
A semiconductor device in which at least a part of the active surface is covered by a passivating combined layer. According to the invention the passivating combined layer comprises two layers of the same semiconductor material lying one on top of the other, the lowermost layer having a resistivity of at least 1010 ohm.cm, and the layer present thereon having a resistivity of at most 108 ohm.cm. |
| 申请公布号 |
DE2655341(A1) |
申请公布日期 |
1977.06.30 |
| 申请号 |
DE19762655341 |
申请日期 |
1976.12.07 |
| 申请人 |
N.V. PHILIPS' GLOEILAMPENFABRIEKEN |
发明人 |
HENRI BIET,JEAN-PIERRE;DHAT LAOU,SIO |
| 分类号 |
H01L29/73;H01L21/314;H01L21/331;H01L21/56;H01L23/29;H01L23/31;H01L29/861;(IPC1-7):H01L29/86;H01L29/70 |
主分类号 |
H01L29/73 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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