发明名称 |
PRODUCTION OF SEMICONDUCTOR MEMORY DEVICE |
摘要 |
PURPOSE:To obtain a non-volatile memory device of low driving voltage and making high speed operation by removing by etching the thin metal film remained on a trapped insulating film and forming an insulating film which does not substantially include the trap over said film and further forming a gate electrode metal. |
申请公布号 |
JPS5275988(A) |
申请公布日期 |
1977.06.25 |
申请号 |
JP19750152985 |
申请日期 |
1975.12.22 |
申请人 |
FUJITSU LTD |
发明人 |
ITOU TAKASHI;NISHI HIDETOSHI |
分类号 |
H01L21/8247;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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