| 摘要 |
PURPOSE:To suppress a reaction with an Al-Si-based alloy interconnection material and to obtain a good continuity by a method wherein an opening part formed in an insulating film is filled with beta tungsten formed by a CVD method. CONSTITUTION:An element isolation region 2 and a diffusion layer 3 are formed on a semiconductor substrate 1; an insulating film 4 and a contact hole 5 are formed on its upper layer. The hole 5 is filled with beta-W by a WCVD method; an Al-Si-based alloy interconnection 7 is formed on its upper layer; the beta-W is diffused to make an electrical continuity to the diffusion layer 3. When this material is selected, a good semiconductor having a low resistance can be obtained because the beta-W is hardly reacted with an Al-Si based alloy. |
