发明名称 Thyristor with four zones of alternate conduction types - has first emitter, first and second base and second emitter
摘要 <p>P-n junctions are produced between the zones, with doping of the SC chip increasing from the second base outwards. The edge of the semiconductor chip is chambered so that the top part, as seen from the first emitter, forms a small acute angle with a plane parallel to the main surface of the chip and its lower part forms a much greater acute angle with a similar plane. The p-n junction 10) between first (2) and second (3) base reaches the edge of the chip at the steep lower part. There are subsequent junctions further down the steep lower part of the base.</p>
申请公布号 DE2537984(A1) 申请公布日期 1977.03.10
申请号 DE19752537984 申请日期 1975.08.26
申请人 SIEMENS AG 发明人 PLATZOEDER,KARL,DIPL.-PHYS.DR.
分类号 H01L29/73;H01L21/331;H01L29/06;H01L29/74;(IPC1-7):01L29/74 主分类号 H01L29/73
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