| 摘要 |
PURPOSE:To realize a dimensional miniaturization and improve the freedom of wiring, by using a wiring body containing a semiconductor which has the same conduction type as a source.drain region being connected to a low voltage power source. CONSTITUTION:An N-channel type cell transistor is formed in a P-well 101 formed on a semiconductor substrate 100. A P<+> diffusion layer 102 constituting a Vcc line and a N<+> layer 103 being connected to a ground line become the source of a cell transistor of P and N channels type. The first polysilicon film 106 to which phosphorus is added operates as a gate electrode and a word wire electrode of the cell transistor. A P-channle drain P<+> layer 104 and a N-channel drain N<+> layer 105 are connected with each other by the second polycrystalline silicon film 110 to which arsenic is added. |
