| 摘要 |
PURPOSE:To remove photosensitive polyimide completely, and to contrive shortening of the time of the above-mentioned removal by a method wherein the vaporized mixture of DMSO and monoethanolamine is sprayed on the semiconductor substrate on which a photosensitive polyimide pattern is formed, and the substrate is swingingly moved. CONSTITUTION:A semiconductor substrate 2 is coated with photosensitive polyimide 1 as organic insulating material, and a pattern is formed by performing an exposure and development. Then, the semiconductor substrate is rotated, and the vaporized mixed solution 3 of DMSO and monoethanolamine is sprayed from a nozzle. Besides, vaporized pure water is sprayed while the substrate is being rotated. Subsequently, the sprayed material is rotatingly dried up by increasing the number of rotation. Consequently, the mixed solution of dimethylsulfoxide(DMSO) monoethanolamine is sprayed on the pattern-formed photosensitive polyimide, and as it is swingingly moved and completely removed, the residue of the polyimide is not generated. |
