Display panel, thin film transistor and method of fabricating the same

摘要

A thin film transistor (TFT) including a gate, a dielectric layer, a metal-oxide semiconductor channel, a source, and a drain is provided. The gate and the metal-oxide semiconductor channel are overlapped. The gate, the source, and the drain are separated by the dielectric layer. Besides, the source and the drain are respectively located on two opposite sides of the metal-oxide semiconductor channel. The metal-oxide semiconductor channel includes a metal-oxide semiconductor layer and a plurality of nano micro structures disposed in the metal-oxide semiconductor layer and separated from one another. In another aspect, a display panel including the TFT and a method of fabricating the TFT are also provided.

主权项

1. A method of fabricating a thin film transistor, comprising:
providing a first base; forming a gate on the first base; forming a dielectric layer on the first base; forming a metal-oxide semiconductor channel on the first base, the metal-oxide semiconductor channel comprising a metal-oxide semiconductor layer and a plurality of nano micro structures, the nano micro structures being distributed throughout an entire thickness of the metal-oxide semiconductor layer and separated from one another, wherein carrier concentration of the nano micro structures is greater than carrier concentration of the metal-oxide semiconductor layer, and the nano micro structures are a plurality of nano particles spread in the metal-oxide semiconductor layer; and forming a source and a drain on the first base, wherein the gate and the metal-oxide semiconductor channel are overlapped, the gate, the source, and the drain are separated by the dielectric layer, and the source and the drain are respectively located on two opposite sides of the metal-oxide semiconductor channel.