SEMICONDUCTOR LASERS UTILIZING INTERNAL SATURABLE ABSORBERS

摘要

Trapping centers are controllably introduced into a junction laser by diffusing a P<+>region to within at least 1.5 mu of the junction. The centers, which act as saturable absorbers, produce bistable regions of operation in c.w. junction lasers operating above the delay transition temperature, the laser being either on or off depending on its previous history of operation. Optical logic and memory devices, as well as methods for fabrication, are discussed.