Bidirectional two-base bipolar junction transistor operation, circuits, and systems with diode-mode turn-on

摘要

Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low.

主权项

1. A method for switching a power bipolar semiconductor device which includes both first-conductivity-type emitter/collector regions and also second-conductivity-type base contact regions on each of both opposed surfaces of a semiconductor die, comprising the actions of:
at turn-on, when an external voltage difference applied between the emitter/collector regions has a polarity such that the emitter/collector region on the first of said surfaces can act as the collector of a vertical bipolar transistor while the emitter/collector region on the second of said surfaces acts as the emitter of the same vertical bipolar transistor, beginning turn-on by shorting the base contact and emitter/collector regions on the first surface together, without driving the base contact region on the second surface, to thereby conduct current as a diode without external base current power; and thereafter applying base current to one but not both of the base contact regions.