发明名称 Semiconductor apparatus and method for producing it
摘要 <p>In order to prevent a decrease of yield due to a discontinuity of a wire or a short between upper and lower metal wires in production of a TFT matrix panel having pixel capacitors and TFTs and produce the TFT panel in a good yield without decrease of an aperture rate of the pixel capacitor portions even with increase in the size of the panel and with micronization of the pixel pattern, ends of bias lines on the opposite side to connection to a common electrode driver for application of bias are electrically connected to each other by a redundant wire. &lt;IMAGE&gt;</p>
申请公布号 EP0984316(A2) 申请公布日期 2000.03.08
申请号 EP19990306912 申请日期 1999.08.31
申请人 CANON KABUSHIKI KAISHA 发明人 WATANABE, MINORU;MOCHIZUKI, CHIORI;ISHII, TAKAMASA
分类号 G02F1/1343;G02F1/136;G02F1/1362;G02F1/1368;G09F9/00;G09F9/30;G09G3/36;H01L29/786;H04N5/335;H04N5/369;H04N5/374;(IPC1-7):G02F1/136;G02F1/134;H01L27/146 主分类号 G02F1/1343
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