发明名称 |
SEMICONDUCTOR ELEMENT WITH ANALOG TRANSISTOR IMPROVED IN WHICH OPERATING CHARACTERISTIC AND FLICKER NOISE CHARACTERISTIC, AND METHOD FOR MANUFACTURING IT |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element in which operating characteristics and the flicker noise characteristics of transistors are improved. SOLUTION: The semiconductor element comprises: a substrate; an analog nMOS transistor and a compressive strain channel pMOS transistor on the substrate; and first and second etching stopper liners which cover the nMOS and the pMOS transistors, respectively. In the nMOS and the pMOS transistors, relative values of flicker noise power at 500Hz with respect to each reference non-strain channel analog nMOS and pMOS transistor are 1 or smaller. COPYRIGHT: (C)2008,JPO&INPIT |
申请公布号 |
JP2007324589(A) |
申请公布日期 |
2007.12.13 |
申请号 |
JP20070135909 |
申请日期 |
2007.05.22 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
UENO TETSUTSUGU;RHEE HWA-SUNG;LEE HO |
分类号 |
H01L21/8238;H01L21/768;H01L27/092;H01L29/78 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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