发明名称 SEMICONDUCTOR ELEMENT WITH ANALOG TRANSISTOR IMPROVED IN WHICH OPERATING CHARACTERISTIC AND FLICKER NOISE CHARACTERISTIC, AND METHOD FOR MANUFACTURING IT
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor element in which operating characteristics and the flicker noise characteristics of transistors are improved. SOLUTION: The semiconductor element comprises: a substrate; an analog nMOS transistor and a compressive strain channel pMOS transistor on the substrate; and first and second etching stopper liners which cover the nMOS and the pMOS transistors, respectively. In the nMOS and the pMOS transistors, relative values of flicker noise power at 500Hz with respect to each reference non-strain channel analog nMOS and pMOS transistor are 1 or smaller. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007324589(A) 申请公布日期 2007.12.13
申请号 JP20070135909 申请日期 2007.05.22
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 UENO TETSUTSUGU;RHEE HWA-SUNG;LEE HO
分类号 H01L21/8238;H01L21/768;H01L27/092;H01L29/78 主分类号 H01L21/8238
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