发明名称 |
ANTIFUSE WITH DOPED BARRIER METAL LAYER |
摘要 |
<p>A method of forming an antifuse in an integrated circuit having an insulating layer on a semiconductor substrate is provided. The method comprises forming a first metal interconnection layer on the insulating layer; forming a first barrier metal layer on the first metal interconnection layer; forming an amorphous silicon layer on the first barrier metal layer; forming another barrier metal layer atop the amorphous silicon layer; and forming a second metal interconnection layer on the second barrier metal layer. In at least one of the barrier metal forming steps, the barrier metal is formed by sputtering a barrier metal target which includes a semiconductor dopant, such as dopant.</p> |
申请公布号 |
WO9514310(A1) |
申请公布日期 |
1995.05.26 |
申请号 |
WO1994US12608 |
申请日期 |
1994.11.02 |
申请人 |
CROSSPOINT SOLUTIONS, INC. |
发明人 |
KARPOVICH, YAKOV |
分类号 |
H01L21/3205;H01L21/82;H01L23/52;H01L23/525;(IPC1-7):H01L27/12;H01L27/02;H01L21/48;H01L21/44 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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