摘要 |
PURPOSE: To provide a perfectly flat interconnection circuit on the bottom side of a recess by a method wherein the interconnection circuit is formed on a first plane surface of a substrate, and the recess of the substrate is etched through a second surface of the substrate. CONSTITUTION: Two thermal silicon barrier layer 11 and 12 are formed on the two main surfaces of a silicon wafer 10 using an oxidizing furnace, an interconnection system 13 between module integrated circuit chips is formed on the first surface of the upper surface of the silicon wafer 10, and a shield resin layer 15 is formed thereon. By etching the shield resin layer 14, which is deposited on the second surface (lower surface) of the wafer 10, a window is opened, and this enables the etching of the mask 17 of the silica layer 12, and the recess 18 is etched to the entire thickness of the substrate. The barrier layer 11 on the mask 17 and the bottom of the recess 18 is removed. As a result, the mechanical strain of system and the distortion of a polymer layer can be minimized. |