| 摘要 |
PURPOSE:To obtain MOS FET which is fine and high in reliability by providing a gate electrode buried in an insulating film on a given substrate with a poly-Si film further provided thereon. CONSTITUTION:Poly-Si is piled up on an SiO2 film 2 on an Si substrate 1, and a mask 4 is applied thereon to form an SiO2 film 32 through selective oxidation. The mask 4 is removed, an SiO2 film 5 is provided on the surface of poly-Si film 31, and P-ion is implanted on the overall surface. Next, a poly-Si film 6 is built up selectively, and a threshold value is controlled, if necessary, through channel doping. Then, a resist mask 7 is formed at the center of the film 6, and an n<+>-type source 8 and drain 9 are formed through P-ion implantation. The mask 7 is removed, an SiO2 film 10 is given for covering, and electrodes 111, 112 are formed by providing a window selectively. According to this constitution, there arises no disconnection of wiring due to ruggedness in a gate domain, a canopy is not brought on a gate electrode, and pressure resistance of the gate is not deteriorated. Therefore, a device can be constituted fine and high-integrated without deteriorating reliability. |
