Method for forming P-N junctions, particularly in IGFET devices, with improved drain voltage characteristics.

摘要

A method of providing less than one µm p-n junction regions, particularly for IGFET devices, in which a high concentration of arsenic is implanted so that its peak lies near the surface of a semiconductor substrate (10). Phosphorus is also implanted with an energy to provide a maximum concentration below that of the arsenic and of a magnitude at least one order of magnitude less than that of arsenic. An oxidation/anneal step thermally diffuses the implanted ions to form a junction less than one µm in thickness.