发明名称 |
Semiconductor laser and manufacturing method therefor |
摘要 |
A semiconductor laser adaptable for a 3-beam method, including a semiconductor laser chip bonded on a primary plane of a flat submount, the semiconductor laser chip having a thickness of 30 to 80 mu m is provided. Also provided is a method for manufacturing a semiconductor laser including the steps of: sequentially stacking layers of compound semiconductor materials on a semiconductor substrate to form a semiconductor laser wafer; mechanically abrading the semiconductor substrate to make it thin; subjecting the mechanically abraded face of the semiconductor substrate to a chemical treatment; forming an electrode film on both sides of the semiconductor laser wafer thus treated; and cutting the semiconductor laser wafer into chips and bonding each of the chips on a submount.
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申请公布号 |
US5392304(A) |
申请公布日期 |
1995.02.21 |
申请号 |
US19930069855 |
申请日期 |
1993.06.01 |
申请人 |
ROHM CO., LTD. |
发明人 |
TANAKA, HARUO;MUSHIAGE, MASATO;KUSUNOKI, KAORU |
分类号 |
H01S5/00;H01S5/02;H01S5/022;(IPC1-7):H01S3/04 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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