| 摘要 |
Provided is a method for producing low-temperature substrate linearly-grown graphene which can be linearly grown at a low temperature. More specifically, provided is a method for producing low-temperature substrate linearly-grown graphene, comprising the following steps: preparing a metal layer on a substrate; supplying etching gas and carbon-containing gas at the low temperature below 500°C; removing the metal layer by means of the etching gas while maintaining inductively coupled plasma-chemical vapor deposition (ICP-CVD), so as to grow graphene on the substrate without containing the metal layer. |
