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发明名称
METHOD OF FORMING NITRIDE FILM AND RESISTOR, BLOCKED SILICIDE RESISTOR, BIPOLAR TRANSISTOR STRUCTURE, CMOSEFET STRUCTURE
摘要
申请公布号
KR20010099640(A)
申请公布日期
2001.11.09
申请号
KR1020010011382
申请日期
2001.03.06
申请人
发明人
分类号
主分类号
代理机构
代理人
主权项
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