发明名称 Method of forming contact windows
摘要 A method of forming contact windows in an insulating layer is disclosed. The contact windows extend down to an underlying metal layer which is formed under the insulating layer. The method comprises the steps of: forming an etching mask layer having openings for defining contact window regions of the insulating layer on the insulating layer; and performing an etching process using an etching gas to which a gas containing nitrogen atoms has been added, thereby etching away the contact window regions of the insulating layer through the openings of the etching mask layer to form the contact windows.
申请公布号 US5254213(A) 申请公布日期 1993.10.19
申请号 US19900601986 申请日期 1990.10.23
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 TAMAKI, TOKUHIKO
分类号 H01L21/302;H01L21/3065;H01L21/311;H01L21/768;(IPC1-7):H01L21/00 主分类号 H01L21/302
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