发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To enable formation of a thin film for connection with few number of steps. SOLUTION: A recess 15 is made in a surface of a surface protective film 12 as shown in figure (a), a metal deposition layer 17, made of the same material as a bonding pad 13, is formed on the protective film 12 having the recess 15 made therein as shown in (c), and further a metallic thin film 18 made of the same material as a thin film 14 for connection is formed on the deposition layer 17 as shown in (d). Then unwanted parts of the deposition and thin films 17 and 18 are removed by mechanochemical polishing (CMP), to obtain a bonding pad 13 and a connecting thin film 14 as shown in (e) at the same time.
申请公布号 JP2000299349(A) 申请公布日期 2000.10.24
申请号 JP19990104314 申请日期 1999.04.12
申请人 ROHM CO LTD 发明人 MATSUMOTO MUNEYUKI
分类号 H01L21/60;H01L23/485;H01L23/532 主分类号 H01L21/60
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