| 摘要 |
<p>PURPOSE:To cover in direct a thermo-setting resin without forming a buffer layer and suppress generation of blister by forming a thermosetting resin layer for semiconductor element protection by hardening a thermosetting resin having a particular non-Newtonian viscosity index. CONSTITUTION:A semiconductor element 3 is covered with a thermosetting resin layer 4 which is formed by hardened thermosetting resin plate. Here, the Newtonian viscosity index which indicates pseudoplasticity of thermosetting resin paste (fluid characteristic in which a structure is gradually destroyed by an external force and thereby fluid resistivity is reduced) is set to 0.75 to 1.0. Thereby, a thermosetting resin layer 4 can be densified. As a result, solvent of external resin paste which invades into the thermosetting resin layer 4 can be prevented effectively without using a buffer layer and the thermosetting resin layer 4 which is improved thermal impact resistance can be obtained without generation of blister.</p> |
