NITRIDE SEMICONDUCTOR LASER AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser oscillating with low oscillation threshold current density and on a longer wavelength side. SOLUTION: In an n-type GaN layer 5 formed on a GaN layer 2 on a sapphire substrate 1, the upper part and the lower part of the active layer 6 of an InGaN multiplex quantum well being a third nitride layer are sandwiched by the guide layers of a p-type GaN layer 7 and an n-type GaN layer 8, and the upper part and the lower part are sandwiched by the clad layers of a p-type AlGaN 9 and an n-type AlGaN 10. An n-type electrode 11 is formed on a face where the opposite side of the laser of a third nitride layer is cut until it reaches a second nitride layer. A p-type electrode 12 is formed on a p-type AlGaN clad layer 9 and light reflection mirrors 13 are formed on both ends of the light guide of the laser.