发明名称 |
CHARGED-PARTICLE BEAM TRANSFER MASK, AND ITS FORMING METHOD |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of highly mass-productively forming the charged-particle beam transfer mask of a stencil mask structure. <P>SOLUTION: The method includes a step of laminating and sticking a plurality of support substrate forming thin plates having a through hole in a predetermined shape to form a support substrate 110A. The method further includes (a) a through hole filling step of filling the through hole 160 of the support substrate 110A with the filler of a predetermined material, (b) a flattening step of grinding both surfaces of the substrate 110A to flatten, (c) a thin film layer forming step of forming a thin film layer 170 for forming a thin film pattern layer over the flattened surface, (d) a filler removing step of removing the filler 160 of the support substrate 110A with the thin film layer and the support substrate 110A left by selective etching, and (e) a thin film pattern forming step of machining the thin film layer by a photo-etching method to form the thin film pattern 175. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
申请公布号 |
JP2005235953(A) |
申请公布日期 |
2005.09.02 |
申请号 |
JP20040041857 |
申请日期 |
2004.02.18 |
申请人 |
DAINIPPON PRINTING CO LTD |
发明人 |
KUROSAWA HIDE;TAKIGAWA TADAHIKO;HOGEN MORIHISA;FUJITA HIROSHI;KONASE YOSHIAKI |
分类号 |
G03F7/20;H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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