METHOD AND APPARATUS FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL INGOT

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon carbide single crystal ingot, capable of efficiently sublimating a raw material charged in a crucible during the growth of a silicon carbide single crystal and suitable for the manufacture of a silicon carbide single crystal ingot having a long size and a large diameter.SOLUTION: The method for manufacturing a silicon carbide single crystal ingot, capable of growing a silicon carbide single crystal by a sublimation recrystallization method for recrystallizing a sublimation gas generated by heating a silicon carbide raw material charged in the crucible on a silicon carbide seed crystal arranged to face each other in the crucible includes heating a central portion of the silicon carbide raw material (the raw material in the crucible) charged in the crucible from the lower side through a central portion of the bottom wall part of the crucible.SELECTED DRAWING: Figure 2