ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

Provided is an electronic device including a semiconductor memory. The semiconductor memory may include: a substrate including a first region and a second region separated from the first region; an interlayer dielectric layer formed over the substrate including first and second regions; a first contact plug located over the first region and formed through the interlayer dielectric layer; a second contact plug located over the second region and formed through the interlayer dielectric layer, wherein the first and the second contact plugs having different structures in the first and second regions, respectively; and a variable resistance element formed over the interlayer dielectric layer over the first region so as to be in contact with the first contact plug.

主权项

1. An electronic device comprising a semiconductor memory,
wherein the semiconductor memory comprises: a substrate including a first region and a second region separated from the first region; an interlayer dielectric layer formed over the substrate including first and second regions; a first contact plug located over the first region and formed through the interlayer dielectric layer; a second contact plug located over the second region and formed through the interlayer dielectric layer, wherein the first and the second contact plugs have different structures in the first and second regions, respectively; and a variable resistance element formed over the interlayer dielectric layer over the first region so as to be in contact with the first contact plug.