Semiconductor device

摘要

A semiconductor device includes first metal-on-semiconductor (MOS), second MOS, and bipolar junction (BJ) structures formed in a substrate. The first MOS structure includes first drain, first channel, and first source regions arranged along a first direction. The first MOS structure further includes a drain electrode formed over and conductively coupled to the first drain region, and a body region formed below and conductively coupled to the channel region. The second MOS structure includes second drain, second channel, and second source regions arranged along a second direction different from the first direction. The BJ structure includes emitter, base, and collector regions. The first source region and the second drain region share a first common semiconductor region in the substrate. The drain electrode and the base region share a second common semiconductor region in the substrate. The body region and the collector region share a third common semiconductor region in the substrate.

主权项

1. A semiconductor device comprising:
a substrate; a first metal-on-semiconductor (MOS) structure formed in the substrate, the first MOS structure including:
a first drain region, a first channel region, and a first source region arranged along a first direction in this order;a drain electrode formed over and conductively coupled to the first drain region; anda body region formed below and conductively coupled to the channel region; a second MOS structure formed in the substrate, the second MOS structure including a second drain region, a second channel region, and a second source region arranged along a second direction different from the first direction in this order; and a bipolar junction (BJ) structure formed in the substrate, the BJ structure including an emitter region, a base region, and a collector region, wherein:
the first source region and the second drain region share a first common semiconductor region in the substrate,the emitter region is in contact with the drain electrode,the drain electrode and the base region share a second common semiconductor region in the substrate, andthe body region and the collector region share a third common semiconductor region in the substrate.