MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A memory device is provided. A first conductive layer, a first diffusion barrier layer, a phase change layer, a second diffusion barrier layer and a second conductive layer are disposed on a first electrode layer in sequence to form a stacking structure. A dielectric layer is disposed on the first electrode layer and covers a sidewall of the stacking structure and part of a top surface of the second conductive layer. A second electrode layer is disposed on the dielectric layer and the second conductive layer. Barrier enhancing components are provided between a bottom surface of the first diffusion barrier layer and a top surface of the second diffusion barrier layer. Further, a method of manufacturing a memory device is provided.

主权项

1. A memory device, comprising:
a first conductive layer, a first diffusion barrier layer, a phase change layer, a second diffusion barrier layer and a second conductive layer, disposed on a first electrode layer in sequence to form a stacking structure; a dielectric layer, disposed on the first electrode layer and covering a sidewall of the stacking structure and part of a top surface of the second conductive layer; a second electrode layer, disposed on the dielectric layer and the second conductive layer; and a plurality of barrier enhancing components provided between a bottom surface of the first diffusion barrier layer and a top surface of the second diffusion barrier layer.