Low power gate trigger circuit for controlling a silicon-controlled rectifier circuit

摘要

A circuit for controlling a silicon-controlled rectifier includes a high breakdown voltage metal-oxide semiconductor field-effect transistor (MOSFET) connected to drive the gate of the silicon-controlled rectifier. The high breakdown voltage MOSFET is itself controlled by a gate voltage. The power requirements for the gate trigger circuit of a series string silicon-controlled rectifier are greatly reduced by using the high breakdown voltage MOSFET as a gate triggering circuit for the silicon-controlled rectifier. Because the MOSFET consumes little power, a limited power source, such as a snubber capacitor voltage that is developed during the OFF-state of the silicon-controlled rectifier, can be used to power the gate trigger circuit.