发明名称 |
Mosfet device and method of controlling dopant diffusion and metal contamination in thin polycide gate conductor |
摘要 |
A MOSFET device is formed on a P- doped semiconductor substrate with an N- well formed therein, with a pair of isolation regions formed in the N- well with a gate oxide layer formed above the N- well. An FET device is formed with source and drain regions within the N-well, and a gate electrode formed above the gate oxide layer aligned with the source and drain regions. The gate electrode comprises a stack of layers. A polysilicon layer is formed on the gate oxide layer. A tungsten nitride dopant barrier layer is formed upon the polysilicon layer having a thickness of from about 5 nm to about 20 nm, and a tungsten silicide layer is formed upon the tungsten nitride layer. |
申请公布号 |
SG68635(A1) |
申请公布日期 |
1999.11.16 |
申请号 |
SG19970003565 |
申请日期 |
1997.09.25 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BALASUBRAMANYAM KARANAM;BRODSKY STEPHEN BRUCE;CONTI RICHARD ANTHONY;EL-KAREH BADIH |
分类号 |
H01L29/43;H01L21/28;H01L21/336;H01L29/49;H01L29/78;(IPC1-7):H01L29/78 |
主分类号 |
H01L29/43 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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