| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a photoelectric converting element that can suppress formation of an inversion layer formed where a silicon substrate and a silicon nitride film come into contact with each other. <P>SOLUTION: The manufacturing method of the photoelectric converting element includes a stage of forming the silicon nitride film on one principal surface of the silicon substrate, the manufacturing method of the photoelectric converting element being characterized in that the silicon substrate is a (p) type on the principal surface side and has the principal surface subjected to a surface treatment using plasma produced using raw material gas containing nitrogen gas before the silicon nitride film is formed. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
