发明名称 THIN FILM METAL CONDUCTIVE LINE AND METHOD FOR MANUFACTURING THE SAME
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a thin film metal conductive line capable of preventing the occurrence of voids or seams and preventing undercut phenomena at the time of etching, when the thin film metal conductive line is manufactured, and to provide a method for manufacturing the same. <P>SOLUTION: The method for manufacturing the thin film metal conductive line includes: a step of forming a seed metal layer on a substrate; a step of forming a first photoresist layer on the seed metal layer and forming a metal conductive line pattern using the first photoresist layer as a mask; a step of forming a second photoresist layer with a certain spacing, especially 0.1 to 2μm, from the metal conductive line pattern after removing the first photoresist layer; a step of forming a passivation film enclosing the metal conductive line by using electrolytic plating; and a step of etching to remove exposed portions of the seed metal layer after removing the second photoresist layer. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009060072(A) 申请公布日期 2009.03.19
申请号 JP20070324507 申请日期 2007.12.17
申请人 TOP ENGINEERING CO LTD 发明人 KIM SANG-HEE
分类号 H05K3/18;C25D5/00;C25D5/02;C25D7/00;H05K3/06;H05K3/24 主分类号 H05K3/18
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